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@@ -3132,8 +3132,8 @@ ident_done:
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* Bad block marker is stored in the last page of each block
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* on Samsung and Hynix MLC devices; stored in first two pages
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* of each block on Micron devices with 2KiB pages and on
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- * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
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- * only the first page.
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+ * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
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+ * All others scan only the first page.
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*/
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if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
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(*maf_id == NAND_MFR_SAMSUNG ||
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@@ -3143,7 +3143,8 @@ ident_done:
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(*maf_id == NAND_MFR_SAMSUNG ||
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*maf_id == NAND_MFR_HYNIX ||
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*maf_id == NAND_MFR_TOSHIBA ||
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- *maf_id == NAND_MFR_AMD)) ||
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+ *maf_id == NAND_MFR_AMD ||
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+ *maf_id == NAND_MFR_MACRONIX)) ||
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(mtd->writesize == 2048 &&
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*maf_id == NAND_MFR_MICRON))
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chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
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